| 摘要 |
A semiconductor device capable of maximizing a channel area in a pillar and a method of manufacturing the same are provided. The semiconductor device includes a pillar disposed on a semiconductor substrate and having first to fourth side surfaces, a first bit line disposed in the first side surface, a storage node junction region disposed in the third side surface facing the first side surface, and a gate disposed in the second side surface or a fourth side surface facing the second surface. |
