发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING NO-FLOW UNDERFILL MATERIAL AROUND VERTICAL INTERCONNECT STRUCTURE |
摘要 |
Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMING NO-FLOW UNDERFILLMATERIAL AROUND VERTICAL INTERCONNECT STRUCTUREA semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die or component is compressed into the no-flow underfill material to electrically contact the conductive layer. A surface of the no-flow underfill material and first solder bump is planarized. A first interconnect structure is formed over a first surface of the no-flow underfill material. The first interconnect structure is electrically connected to the solder bump. A second sacrificial carrier is mounted over the first interconnect structure. A second interconnect structure is formed over a second side of the no-flow underfill material. The second interconnect structure is electrically connected to the first solder bump. The semiconductor devices can be stacked and electrically connected through the solder bump.(Fig. 6) |
申请公布号 |
SG182956(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
SG20120047403 |
申请日期 |
2010.02.25 |
申请人 |
STATS CHIPPAC LTD |
发明人 |
HUANG, RUI;KUAN, HEAP HOE;LIN, YAOJIAN;CHOW, SENG GUAN |
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