发明名称 |
METHODS OF SELF-ALIGNED GROWTH OF CHALCOGENIDE MEMORY ACCESS DEVICE |
摘要 |
<p>Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.</p> |
申请公布号 |
SG182384(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
SG20120049862 |
申请日期 |
2010.12.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GREELEY, NEIL;SRINIVASAN, BHASKAR;SANDHU, GURTEJ;SMYTHE, JOHN |
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