发明名称 |
Method of Manufacturing Semiconductor Device Having Metal Gate |
摘要 |
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
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申请公布号 |
US2012220113(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201113033616 |
申请日期 |
2011.02.24 |
申请人 |
LIAO PO-JUI;TSAI TSUNG-LUNG;LIN CHIEN-TING;HSU SHAO-HUA;LU SHUI-YEN;CHOU PEI-YU;CHEN SHIN-CHI;LIAO JIUNN-HSIUNG;TSAI SHANG-YUAN;YANG CHAN-LON;TSAI TENG-CHUN;LIN CHUN-HSIEN |
发明人 |
LIAO PO-JUI;TSAI TSUNG-LUNG;LIN CHIEN-TING;HSU SHAO-HUA;LU SHUI-YEN;CHOU PEI-YU;CHEN SHIN-CHI;LIAO JIUNN-HSIUNG;TSAI SHANG-YUAN;YANG CHAN-LON;TSAI TENG-CHUN;LIN CHUN-HSIEN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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