发明名称 |
SEMICONDUCTOR FABRICATION APPARATUSES TO PERFORM SEMICONDUCTOR ETCHING AND DEPOSITION PROCESSES AND METHODS OF FORMING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.
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申请公布号 |
US2012220110(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213468080 |
申请日期 |
2012.05.10 |
申请人 |
LEE KYUNG-WOO;KIM JIN-SUNG;YOON JOO-BYOUNG;LEE YEONG-CHEOL;PARK SANG-JUN;JEON HEE-KYEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYUNG-WOO;KIM JIN-SUNG;YOON JOO-BYOUNG;LEE YEONG-CHEOL;PARK SANG-JUN;JEON HEE-KYEONG |
分类号 |
H01L21/205;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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