发明名称 SHEET FOR PROTECTING SURFACE OF SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR WAFER PROTECTION METHOD USING SHEET
摘要 <p>SHEET FOR PROTECTING SURFACE OF SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR WAFER PROTECTION METHOD USING SHEETAbstractTo provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer, and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25°C, EA (25), of 1 Gpa or more; a resin layer A that satisfies the condition EA (60)! EA (25) < 0.1, where EA (25) is a tensile elasticity at 25°C and where EA (60) is a tensile elasticity at 60°C, the EA (60) ranging from 0.005 MPa to 1 MPa; and a resin layer (B) having a tensile elasticity at 60°C, E6 (60), of 1 Mpa or more and having a thickness of 0.1 pm to less than 100 pm, the EB (60) being larger that EA (60) of the resin layer A. Figure 1</p>
申请公布号 SG182382(A1) 申请公布日期 2012.08.30
申请号 SG20120049839 申请日期 2011.05.31
申请人 MITSUI CHEMICALS TOHCELLO, INC. 发明人 EIJI HAYASHISHITA;YOSHIHISA SAIMOTO;MAKOTO KATAOKA;KATSUTOSHI OZAKI;MITSURU SAKAI
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