GROUP III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor electronic device in which a semiconductor layer, which isolates a gate electrode from a current path in a semiconductor stack, can be made thicker.

SOLUTION: A second semiconductor layer 15 is provided on a first semiconductor layer 13. A gate electrode 17 is provided on the second semiconductor layer 15. The first semiconductor layer 13 is provided on a semiconductor surface 21a composed of AlXGa1-XN (0XGa1-XN, and the first semiconductor layer 13 includes distortion. The thickness T15 of the second semiconductor layer 15 is larger than the critical film thickness defined by the composition of the first group III nitride semiconductor material that is distortionless and the composition of the second group III nitride semiconductor. The first semiconductor layer 13 includes distortion, and is lattice-relaxed on the AlXGa1-XN of the semiconductor surface 21a.

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