发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
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申请公布号 |
US2012217639(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201013499652 |
申请日期 |
2010.09.02 |
申请人 |
SUGIMOTO MASAHIRO;SEKI AKINORI;KAWAHASHI AKIRA;TAKAHASHI YASUO;MAEDA MASAKATSU;TOYOTA JIDOSHA KABUSHIKI KAIHSA |
发明人 |
SUGIMOTO MASAHIRO;SEKI AKINORI;KAWAHASHI AKIRA;TAKAHASHI YASUO;MAEDA MASAKATSU |
分类号 |
H01L23/482;H01L21/74 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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