LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION

摘要

An epitaxy method includes providing (402) an exposed crystalline region of a substrate material. Silicon is epitaxially deposited (404) on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted (408) with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.