发明名称 TECHNIQUES FOR REDUCING DISTURBANCE IN A SEMICONDUCTOR MEMORY DEVICE
摘要 Techniques for reducing disturbance in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device having reduced disturbance. The semiconductor memory device may comprise a plurality of memory cells arranged in arrays of rows and columns. The semiconductor memory device may also comprise a plurality of data sense amplifiers, coupled to the plurality of memory cells, configured to perform one or more operations during an operation/access cycle, wherein the operation/access cycle may comprise an operation segment and a disturbance recovery segment.
申请公布号 US2012218847(A1) 申请公布日期 2012.08.30
申请号 US201213465982 申请日期 2012.05.07
申请人 KWON JUNGTAE;KIM DAVID;BHARDWAJ SUNIL;MICRON TECHNOLOGY, INC. 发明人 KWON JUNGTAE;KIM DAVID;BHARDWAJ SUNIL
分类号 G11C7/06 主分类号 G11C7/06
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