发明名称 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS, AND STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a technology capable of providing a high cleaning effect in a short time when cleaning the surface of a substrate of which a static contact angle of water is 85&deg; or larger. <P>SOLUTION: With a substrate being rotated, a cleaning liquid is discharged from a cleaning nozzle to the central part of the substrate, such that it is spread across the entire surface of the substrate by centrifugal force. Then, while the substrate is being rotated, a discharge position of the cleaning liquid on the substrate is changed to an eccentric position which is deviated from the central part of the substrate. At the same time, under such condition as a distance is set to be 9-15 mm between a gas discharge position side interface at the discharge position of the cleaning liquid and a cleaning liquid discharge position side interface at the discharge position of gas by a gas nozzle, the gas is discharged to the central part of the substrate from the gas nozzle, so that a dry area of the cleaning liquid is formed. After that, the supply position of the cleaning liquid is shifted toward the peripheral edge of the substrate at a speed lower than the speed at which the dry area expands outward. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012165000(A) 申请公布日期 2012.08.30
申请号 JP20120088434 申请日期 2012.04.09
申请人 TOKYO ELECTRON LTD 发明人 YOSHIHARA KOSUKE;YOSHIDA YUICHI;YAMAMOTO TARO
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
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