POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWER SEMICONDUCTOR DEVICE

摘要

An insulated gate bipolar device (1) is provided having layers of different conductivity types between an emitter electrode (2) on an emitter side (22) and a collector electrode (25) on a collector side (27) in the following order: a source region (3) of a first conductivity type, a base layer (4) of a second conductivity type, which contacts the emitter electrode (2) in a contact area (24), an enhancement layer (8) of the first conductivity type, a floating compensation layer (9) of the second conductivity type having a compensation layer thickness tp (92), a drift layer (5) of the first conductivity type having lower doping concentration than the enhancement layer (8) and a collector layer (6) of the second conductivity type. The compensation layer (9) is arranged in a projection of the contact area (24) between the enhancement layer (8) and the drift layer (5), such that a channel between the enhancement layer (8) and the drift layer (5) is maintained. The enhancement layer (8) has an enhancement layer thickness tn (82), which is measured in the same plane as the compensation layer thickness (92), and the following rule applies: N p t p = kN n t n , wherein Nn and Np are the doping concentration of the enhancement layer and compensation layer, respectively; and k is a factor between 0.67 and 1.5.