| 摘要 |
A driver circuit (10) for controlling a semiconductor power switch (Q7) comprises a first power driver transistor (QS) and a second power driver transistor (Q5) complementary to the first power driver transistor (08). Both power driver transistors (Q5, Q6) have an output terminal connected to an input terminal {34} of the semiconductor power switch (Q7). An input terminal of the second power driver transistor (Q5) is connected to a half bridge circuit comprising a; first pre-driver transistor (Q3) and a second pre-driver transistor (04) complementary to the first pre-driver transistor <Q3). Both first and second pre-driver transistors (03, Q4) have an output terminal (18) connected to the input terminal of the second power driver transistor (05). This provides fast switching times with low power consumption for the pre-driver transistors (Q3, Q4). |
