| 摘要 |
PURPOSE: A variable impedance control method for a memory device is provided to increase an effective signal speed by providing a line which minimizes signal reflection. CONSTITUTION: Impedance is changed by using switches which switch between a nonvolatile memory unit and an impedance terminal. Switches are controlled to connect a memory controller(110) to one nonvolatile memory unit and one or more impedance terminals by a shared bus. The impedance terminals provide a smaller load that is impedance matched with the source impedance on a shared bus(118) provided by the memory controller.
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