发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To reduce the number of photomasks used for manufacturing a transistor and for manufacturing a display device compared with the former. <P>SOLUTION: A display device is manufactured through three photolithography steps in total: one photolithography step for forming a gate electrode and forming an island-shaped semiconductor layer; one photolithography step for forming a planarization insulation layer and then forming a contact hole; and one photolithography step for forming a source electrode and a drain electrode and forming a pixel electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012164976(A) 申请公布日期 2012.08.30
申请号 JP20120006104 申请日期 2012.01.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KUWABARA HIDEAKI
分类号 H01L29/786;G02F1/1368;H01L21/336;H01L51/50;H05B33/08;H05B33/10;H05B33/12;H05B33/22;H05B33/26;H05B33/28 主分类号 H01L29/786
代理机构 代理人
主权项
地址