| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a circuit area of a high voltage generation section such as a charge pump. <P>SOLUTION: The semiconductor storage device includes: a plurality of memory cells 21 to which word lines and bit lines are connected and which are arranged in a matrix form; a plurality of word line drivers 23a and 23b which drive the word lines; a charge pump 11 which boosts a power source voltage to generate a high voltage; and an X-direction high voltage control circuit 31 and a Y-direction high voltage control circuit 32 which control voltages so that the high voltage is applied to a portion related to an access, and the power source voltage is applied to a portion not related to the access, out of the plurality of memory cells 21. <P>COPYRIGHT: (C)2012,JPO&INPIT |
