发明名称 FILM FORMATION SYSTEM AND FILM FORMATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a film formation system and a film formation method that can set a target film thickness of film formation per substrate and can thus form a film thickness corresponding to an electrode line width. <P>SOLUTION: A film formation system 100 having a measurement chamber 102 for measuring a plurality of resists 19 formed on a substrate 18 and a sheet-fed film formation chamber 104 for forming electrodes 21 on the substrate 18 by film formation per substrate 18 includes: measurement means 116 in the measurement chamber 102 for measuring a resist distance between adjacent resists 19 or a resist line width on the substrate 18; control means 114 for calculating an optimum electrode film thickness for a predetermined frequency of an electric element fabricated from the substrate 18 on the basis of the resist distance or resist line width measured by the measurement means 116; and film formation means 10 in the sheet-fed film formation chamber 104 for forming electrodes on the substrate 18 such that an electrode film thickness on the substrate 18 is the optimum electrode film thickness calculated by the control means 114. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012165214(A) 申请公布日期 2012.08.30
申请号 JP20110024459 申请日期 2011.02.07
申请人 MURATA MFG CO LTD 发明人 SEKI HITOSHI;FUKUNAGA SHIGEKI;YAMAMOTO SHINYA
分类号 H03H3/08;C23C14/04;H01L21/027;H01L21/677 主分类号 H03H3/08
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