发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a manufacturing method for a semiconductor device includes: forming a test pattern with a metal film embedded therein through a plating process; detecting a characteristic of the test pattern; and adjusting a condition for the plating process based on the detected characteristic of the test pattern. The test pattern is formed over three or more wiring layers and includes a stacked via in an intermediate layer.
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申请公布号 |
US2012217497(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213351280 |
申请日期 |
2012.01.17 |
申请人 |
SHOJI FUMITO;YAMADA NORITERU;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHOJI FUMITO;YAMADA NORITERU |
分类号 |
H01L23/58;B05C11/00;H01L21/66 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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