发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 According to one embodiment, a manufacturing method for a semiconductor device includes: forming a test pattern with a metal film embedded therein through a plating process; detecting a characteristic of the test pattern; and adjusting a condition for the plating process based on the detected characteristic of the test pattern. The test pattern is formed over three or more wiring layers and includes a stacked via in an intermediate layer.
申请公布号 US2012217497(A1) 申请公布日期 2012.08.30
申请号 US201213351280 申请日期 2012.01.17
申请人 SHOJI FUMITO;YAMADA NORITERU;KABUSHIKI KAISHA TOSHIBA 发明人 SHOJI FUMITO;YAMADA NORITERU
分类号 H01L23/58;B05C11/00;H01L21/66 主分类号 H01L23/58
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