发明名称 |
Integrated Circuit Having Interleaved Gridded Features, Mask Set, and Method for Printing |
摘要 |
A method for fabricating an integrated circuit includes the steps of: providing a substrate having a semiconductor surface; providing a hardmask material on the semiconductor surface. For at least one masking level of the integrated circuit: providing a mask pattern for the masking level partitioned into a first mask and at least one second mask, the first mask providing features in a first grid pattern and the at least one second mask providing features in a second grid pattern, wherein the first and the second grid pattern have respective features which interleave with one another over at least one area; applying a first photoresist layer with the first mask; exposing the first grid pattern using the first mask; developing the first photoresist layer; etching the hardmask material to transfer the first grid pattern in the surface of the substrate; removing the first photoresist layer. |
申请公布号 |
US2012220133(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213447629 |
申请日期 |
2012.04.16 |
申请人 |
ATON THOMAS J.;PLUMTON DONALD;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ATON THOMAS J.;PLUMTON DONALD |
分类号 |
H01L21/32 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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