发明名称 Integrated Circuit Having Interleaved Gridded Features, Mask Set, and Method for Printing
摘要 A method for fabricating an integrated circuit includes the steps of: providing a substrate having a semiconductor surface; providing a hardmask material on the semiconductor surface. For at least one masking level of the integrated circuit: providing a mask pattern for the masking level partitioned into a first mask and at least one second mask, the first mask providing features in a first grid pattern and the at least one second mask providing features in a second grid pattern, wherein the first and the second grid pattern have respective features which interleave with one another over at least one area; applying a first photoresist layer with the first mask; exposing the first grid pattern using the first mask; developing the first photoresist layer; etching the hardmask material to transfer the first grid pattern in the surface of the substrate; removing the first photoresist layer.
申请公布号 US2012220133(A1) 申请公布日期 2012.08.30
申请号 US201213447629 申请日期 2012.04.16
申请人 ATON THOMAS J.;PLUMTON DONALD;TEXAS INSTRUMENTS INCORPORATED 发明人 ATON THOMAS J.;PLUMTON DONALD
分类号 H01L21/32 主分类号 H01L21/32
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