| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device in simple processes. <P>SOLUTION: A fifth interlayer insulation film 113e is disposed on an imaging region 103 and a peripheral region 104 of a semiconductor substrate 101. An opening 116 is formed at a position overlapping with a photoelectric conversion part 105 of the fifth interlayer insulation film 113e. A first waveguide member 118 is formed on the imaging region 103 and the peripheral region 104 of the semiconductor substrate 101. A part of the first waveguide member 118, disposed on the peripheral region 104, is removed to expose the fifth interlayer insulation film 113e. <P>COPYRIGHT: (C)2012,JPO&INPIT |
