| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a single or multiple gate field plate which can realize a device with a field plate, without a dry or wet etching process not doing much damage to a dielectric material. <P>SOLUTION: A field effect transistor 10 comprises a source ohmic contact 12, a drain ohmic contact 14, a gate contact 16, and an active region 18. The method includes (1) depositing or growing a dielectric material in intrinsic and extrinsic regions of a device, (2) patterning the dielectric material by a dry or wet etching process or a lift-off process, and (3) performing vapor deposition of a field plate on the patterned dielectric material. <P>COPYRIGHT: (C)2012,JPO&INPIT |
