发明名称 FLARE PREDICTION METHOD, PHOTOMASK FABRICATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND FLARE PREDICTION PROGRAM
摘要 <P>PROBLEM TO BE SOLVED: To provide a flare prediction method capable of predicting flare with high precision and in a short computation time. <P>SOLUTION: There is provided a flare prediction method in a photolithography comprising: a step S14 of obtaining a pattern density distribution of a pattern layout; a step S15 of obtaining a gradient of change in the pattern density distribution; and steps S16 to S19 of performing flare computations in a plurality of division sizes which are based on the gradient of change in the pattern density distribution. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012164767(A) 申请公布日期 2012.08.30
申请号 JP20110023019 申请日期 2011.02.04
申请人 TOSHIBA CORP 发明人 UNO TAIGA;ARISAWA YUKIYASU
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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