发明名称 |
FLARE PREDICTION METHOD, PHOTOMASK FABRICATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND FLARE PREDICTION PROGRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a flare prediction method capable of predicting flare with high precision and in a short computation time. <P>SOLUTION: There is provided a flare prediction method in a photolithography comprising: a step S14 of obtaining a pattern density distribution of a pattern layout; a step S15 of obtaining a gradient of change in the pattern density distribution; and steps S16 to S19 of performing flare computations in a plurality of division sizes which are based on the gradient of change in the pattern density distribution. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012164767(A) |
申请公布日期 |
2012.08.30 |
申请号 |
JP20110023019 |
申请日期 |
2011.02.04 |
申请人 |
TOSHIBA CORP |
发明人 |
UNO TAIGA;ARISAWA YUKIYASU |
分类号 |
H01L21/027;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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