| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor photoelectric conversion element using a I-III-VI compound semiconductor which improves photoelectric conversion efficiency by a simple method and a simple structure. <P>SOLUTION: A I-III-VI chalcopyrite compound semiconductor layer is formed on a back electrode. A layer on which particles having large amounts of free electrons are deposited is formed on the compound semiconductor layer by deposition using a particle dispersion liquid having large amounts of free electrons and an average particle size of 1 nm to 100 nm, and drying. A buffer layer is formed on the deposition layer. And further, a transparent conductive film is formed on the buffer layer. As a result, a photoelectric conversion element utilizing surface plasmon resonance effect is achieved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
