发明名称 |
VIA STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To form a substrate through via with a smaller diameter. <P>SOLUTION: The structure comprises a first hole part 102 formed at a depth in a desired range of a hole diameter from a main surface 101a side, on which a circuit of a substrate 101 is formed; a second hole part 103 formed from a rear face of the substrate 101 and connected to the first hole part 102; a first hole part wiring 104 formed inside the first hole part 102; a surface wiring layer 105 connected to the first hole part wiring 104 and formed on the main surface 101a side of the substrate 101; a second hole part wiring 106 connected to the first hole part wiring part 104 and formed inside the second hole part 103; and a rear face wiring layer 107 connected to the second hole wiring 106 and formed on the rear face of the substrate 101. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012164792(A) |
申请公布日期 |
2012.08.30 |
申请号 |
JP20110023684 |
申请日期 |
2011.02.07 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TSUTSUMI TAKUYA;AKEYOSHI TOMOYUKI;SUGITANI SUEHIRO;NISHIMURA KAZUMI |
分类号 |
H01L21/3205;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|