发明名称 |
POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS |
摘要 |
A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.
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申请公布号 |
US2012220112(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213404824 |
申请日期 |
2012.02.24 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;NAGATA TAKESHI;MORISAWA TAKU |
分类号 |
H01L21/265;G03F7/004;G03F7/20 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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