发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.
申请公布号 US2012220112(A1) 申请公布日期 2012.08.30
申请号 US201213404824 申请日期 2012.02.24
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;NAGATA TAKESHI;MORISAWA TAKU
分类号 H01L21/265;G03F7/004;G03F7/20 主分类号 H01L21/265
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