| 摘要 |
<P>PROBLEM TO BE SOLVED: To cut an adhesive layer formed on a semiconductor wafer without partially cutting a wiring part of a semiconductor element, soiling the semiconductor element with cutting scraps, or putting a load causing chip fractures. <P>SOLUTION: According to an embodiment, there are provided steps of: forming a cutting groove 31 on an element formation surface of a semiconductor wafer 1', on which a semiconductor element is formed; attaching a protective tape 32 on the element formation surface of the semiconductor wafer 1'; reducing a thickness of the semiconductor wafer 1' by griding a back surface of the semiconductor wafer 1' and dividing the semiconductor wafer 1' into a plurality of semiconductor chips 1; forming an adhesive layer 33 on the back surface of the semiconductor wafer 1'; cutting the adhesive layer 33 so as to separate the adhesive layer 33 according to each of the semiconductor chips 1; and peeling off the protective tape 32. The step of cutting the adhesive layer 33 so as to separate the adhesive layer 33 according to each of the semiconductor chips 1 is performed by spraying a high-pressure air on the adhesive layer 33 while heating the adhesive layer 33 formed on the back surface of the semiconductor wafer 1' so as to let the adhesive layer 33 melt or soften. <P>COPYRIGHT: (C)2012,JPO&INPIT |
