SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device including a drift layer that has a desired impurity concentration and high crystallinity.

SOLUTION: A buffer layer 31 is provided on a substrate 30, is made from silicon carbide containing an impurity, and has a thickness ranging from 1 μm to 7 μm. A drift layer 32 is provided on the buffer layer 31 and is made from silicon carbide having a smaller impurity concentration than the silicon carbide constituting the buffer layer 31.

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