发明名称 METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM
摘要 In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.
申请公布号 US2012219724(A1) 申请公布日期 2012.08.30
申请号 US201013497929 申请日期 2010.09.17
申请人 NEISHI KOJI;KOIKE JUNICHI;MATSUMOTO KENJI;TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED 发明人 NEISHI KOJI;KOIKE JUNICHI;MATSUMOTO KENJI
分类号 C23C16/18;C23C16/50;C23C16/52 主分类号 C23C16/18
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