发明名称 |
MEMORY CELLS, METHODS OF FORMING MEMORY CELLS, AND METHODS OF PROGRAMMING MEMORY CELLS |
摘要 |
Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion- vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another. |
申请公布号 |
WO2012115732(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
WO2012US21168 |
申请日期 |
2012.01.13 |
申请人 |
MICRON TECHNOLOGY, INC.;LIU, JUN;SANDHU, GURTEJ, S. |
发明人 |
LIU, JUN;SANDHU, GURTEJ, S. |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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