发明名称 GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS
摘要 A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
申请公布号 US2012218011(A1) 申请公布日期 2012.08.30
申请号 US201213468287 申请日期 2012.05.10
申请人 KELLEY ROBIN LYNN;REES FENTON;SS SC IP, LLC 发明人 KELLEY ROBIN LYNN;REES FENTON
分类号 H03K3/017 主分类号 H03K3/017
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