发明名称 |
GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS |
摘要 |
A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET. |
申请公布号 |
US2012218011(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213468287 |
申请日期 |
2012.05.10 |
申请人 |
KELLEY ROBIN LYNN;REES FENTON;SS SC IP, LLC |
发明人 |
KELLEY ROBIN LYNN;REES FENTON |
分类号 |
H03K3/017 |
主分类号 |
H03K3/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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