METHOD OF FABRICATING A SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A substrate forming method for manufacturing a semiconductor device is provided to form a nitride layer adding a tensile stress to a substrate in a rear surface of the substrate, thereby preventing crystalline deformity caused by a compressive stress on the substrate. CONSTITUTION: A padoxide layer(210) is formed in a top surface of a substrate(200). A material layer(220) adding a tensile stress on a substrate is formed in a lateral surface and a rear surface of the substrate and the padoxide layer. A protective layer having the material layer and an etching selection ratio is formed in the material layer. The material layer being exposed to the lateral surface and top surface is eliminated. The protective layer covering the material layer remained on the rear surface of the substrate is eliminated so that the material layer becomes exposed.