| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress occurrence of side etching of a film containing silicon when a recess is formed in a silicon layer by performing plasma etching of a substrate, on which a resist mask, a film containing silicon and a silicon layer are laminated in this order from the upper side, through a pattern of the resist mask. <P>SOLUTION: After a silicon layer 1 is exposed by etching a silicon nitride film 2, the silicon layer 1 is etched slightly by using the plasma (ions) of a treatment gas containing chlorine so that a deposit 13 containing chlorine and silicon adheres to the sidewall of the silicon nitride film 2. The deposit 13 is a material less susceptible to be etched than the silicon layer 1, and the chlorine ions are plasma performing anisotropic etching. <P>COPYRIGHT: (C)2012,JPO&INPIT |
