| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve controllability of the shape of contacts formed in insulating films having different film characteristics in a method of manufacturing a semiconductor device. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming element regions on a semiconductor substrate; forming a first insulating film on a first region of the semiconductor substrate; forming a second insulating film, on a second region of the semiconductor substrate, having a different membrane stress and a different etching rate during etching in forming contacts from the first insulating film; selectively irradiating a contact region in which the contacts are formed with UV light in at least the second insulating film; and after the irradiation of the UV light, forming the contacts by etching the first insulating film and the second insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
