发明名称 |
METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM |
摘要 |
According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.
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申请公布号 |
US2012219710(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213404547 |
申请日期 |
2012.02.24 |
申请人 |
MOROZUMI YUICHIRO;HISHIYA SHINGO;HARADA KATSUSHIGE;TOKYO ELECTRON LIMITED |
发明人 |
MOROZUMI YUICHIRO;HISHIYA SHINGO;HARADA KATSUSHIGE |
分类号 |
C23C16/34;C23C16/52 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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