| 发明名称 |
SUPPORT METHOD, HIGH-TEMPERATURE TREATMENT METHOD USING SAME, AND SUPPORT JIG |
| 摘要 |
A method for supporting a support to which a wafer is attached, by supporting the support against gravitational force by supporting three or more support points of an inner circumference section of a support surface of the support. The support surface of the support is opposite to a side on which the wafer is attached to the support. |
| 申请公布号 |
US2012217210(A1) |
申请公布日期 |
2012.08.30 |
| 申请号 |
US201213404254 |
申请日期 |
2012.02.24 |
| 申请人 |
KUBO ATSUSHI;IMAI HIROFUMI;TAMURA KOKI;YOSHIOKA TAKAHIRO;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
KUBO ATSUSHI;IMAI HIROFUMI;TAMURA KOKI;YOSHIOKA TAKAHIRO |
| 分类号 |
H01L21/683;F27D5/00 |
主分类号 |
H01L21/683 |
| 代理机构 |
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代理人 |
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| 主权项 |
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