METHOD FOR FORMING SEMICONDUCTOR SUBSTRATE ISOLATIONS

摘要

A method for forming semiconductor substrate isolations is provided. The method comprises the following steps: providing a semiconductor substrate, forming a first oxide layer and a nitride layer on the substrate in turn, exposing parts of the substrate by forming openings in the first oxide layer and the nitride layer, implanting oxygen ions into the substrate through the openings, forming a second oxide layer at least on the surface of the parts of the semiconductor substrate by performing annealing operation, and removing the first oxide layer and the nitride layer.