| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an all-purpose plasma processing device which has a size capable of generating plasma on the processed object as a whole, as an electrode for generating the plasma and has an electrode with a mechanism capable of arbitrarily controlling the planar distribution of the plasma generated. <P>SOLUTION: In the plasma processing device, wherein an assembled electrode 2 formed by massing a plurality of unit electrodes 3 is arranged on the surface of the processed object 1, by preparing a gap 4 and a process gas is supplied to the gap and the surface of the processed object is processed, by generating the plasma at the gap by applying a high-frequency voltage on the assembled electrode, the assembled electrode is arranged on a common conductive base plate, connected to a high-frequency power source while respective unit electrodes are electrically connected and they are displaced in the rectangular direction to the conductive base plate, respective unit electrodes can individually take a standard position and a retreated position on an actuator 8, plasma is generated when the unit electrode is at the standard position, and the plasma disappears when the unit electrode is at the retreated position. <P>COPYRIGHT: (C)2009,JPO&INPIT |
