| 摘要 |
Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×1017 atoms/cm3 (ASTM F121-1979) or less, BMD (Bulk Micro Defect) density—oxygen precipitate within wafer—is 5×107 pieces/cm3 or less, and an electric resistivity thereof is 100Ω·cm or more. And further disclosed are high resistivity silicon wafers having an electric resistivity of 100Ω·cm or more, which are cut from crystal region where no COP (Crystal Originated Particle) exist, and in which neither COP (Crystal Originated Particle) nor oxygen precipitate exist at the area from wafer surface to the depth of 5μm or more owing to high temperature treatment. It is preferable that, in said high resistivity wafers, carbon concentration in wafers is 1×1016 atoms/cm3 or more (ASTM F123-1981), and/or nitrogen concentration is 1×1013 atoms/cm3 or more. Accordingly, high resistivity silicon wafers are provided, wherein the mechanical strength thereof is highly secured, and an excellent characteristic to slip generation is provided, so as to be optimal for base wafers of silicon wafers having a SOI structure or an epitaxial structure. |
