PHASE-CHANGE MEMORY DEVICE, FLEXIBLE PHASE-CHANGE MEMORY DEVICE USING INSULATING NANO-DOT AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: A phase change memory device, a flexible phase change memory device, and a manufacturing method thereof using insulated nano particles are provided to reduce a reset current by decreasing a contact area between a phase change layer and an electrode. CONSTITUTION: A brush layer(11) is laminated on a substrate(10). The coated brush layer is coated with block copolymer solutions. A coated block copolymer(12) is self-assembled by an annealing process. A specific polymer block(13) is removed among the self-assembled block copolymer by patterning process.