| 摘要 |
<p>A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.</p> |
