发明名称 |
Chemically amplified negative resist composition and patterning process |
摘要 |
<p>A polymer comprising 0.5-10 mol% of recurring units having acid generating capability and 50-99.5 mol% of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.</p> |
申请公布号 |
EP2492747(A2) |
申请公布日期 |
2012.08.29 |
申请号 |
EP20120157262 |
申请日期 |
2012.02.28 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
MASUNAGA, KEIICHI;DOMON, DAISUKE;WATANABE, SATOSHI |
分类号 |
G03F7/004;G03F7/038 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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