SEMICONDUCTOR DEVICE HAVING PLANARIZED INSULATION AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor device having a planarized insulation layer and a forming method thereof are provided to prevent first and second planarized insulation layers from being damaged by preventing a physical stress from being applied to a stress concentration area of a first insulation layer. CONSTITUTION: A substrate(100) having a first section(A) and a second section(B) adjacent each other. A structure(110) is formed on the top of the substrate within the first section. A first insulation layer is formed on the substrate having the structure. The first insulation layer comprises a first top surface, an inclined side wall(130S), and a second top surface(130TB). A second insulation layer is formed on the first insulation layer.