| 发明名称 |
ESD/ANTENNA DIODES FOR THROUGH-SILICON VIAS |
| 摘要 |
<p>Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.</p> |
| 申请公布号 |
EP2491588(A1) |
申请公布日期 |
2012.08.29 |
| 申请号 |
EP20090748628 |
申请日期 |
2009.10.30 |
| 申请人 |
SYNOPSYS, INC. |
发明人 |
SU, QING;NI, MIN;TANG, ZONGWU;KAWA, JAMIL;SPROCH, JAMES, D. |
| 分类号 |
H01L23/48;H01L23/60;H01L23/62;H01L27/02 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
