发明名称 Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell
摘要 A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component (C) to obtain a mixed solution and mixing an aqueous solution (IV) which includes a component (N) in the mixed solution to prepare a reaction solution in which the concentration of the component (C) is 0.001 to 0.25M, concentration of the component (N) is 0.41 to 1.0M, and the pH before the start of reaction is 9.0 to 12.0, and, using the reaction solution, forming a Zn compound layer of Zn(S, O) and/or Zn(S, O, OH) on the fine particle layer by a liquid phase method with a reaction temperature of 70 to 95° C.
申请公布号 US8252611(B2) 申请公布日期 2012.08.28
申请号 US20100898403 申请日期 2010.10.05
申请人 KAWANO TETSUO;FUJIFILM CORPORATION 发明人 KAWANO TETSUO
分类号 H01L21/00 主分类号 H01L21/00
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