发明名称 |
Fabrication of trench DMOS device having thick bottom shielding oxide |
摘要 |
Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure. |
申请公布号 |
US8252647(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20090551417 |
申请日期 |
2009.08.31 |
申请人 |
LEE YEEHENG;TAI SUNG-SHAN;CHANG HONG;CHEN JOHN;ALPHA & OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
LEE YEEHENG;TAI SUNG-SHAN;CHANG HONG;CHEN JOHN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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