发明名称 Semiconductor memory device having pad electrodes arranged in plural rows
摘要 To include a first memory cell array area and a second memory cell array area, a peripheral circuit area arranged between these memory cell array areas, a first pad row arranged between the first memory cell array area and the peripheral circuit area, and a second pad row arranged between the second memory cell array area and the peripheral circuit area. No peripheral circuit is arranged substantially between the first memory cell array area and the first pad row as well as between the second memory cell array area and the second pad row. With this arrangement, a memory cell array area and a predetermined pad can be connected within a shorter distance by using a wiring formed in an upper layer that has a lower electrical resistance, and a power potential can be stably supplied to the memory cell array area.
申请公布号 US8254153(B2) 申请公布日期 2012.08.28
申请号 US20100923168 申请日期 2010.09.07
申请人 DONO CHIAKI;FUJISAWA HIROKI;ELPIDA MEMORY, INC. 发明人 DONO CHIAKI;FUJISAWA HIROKI
分类号 G11C5/06 主分类号 G11C5/06
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