发明名称 |
Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus |
摘要 |
Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. |
申请公布号 |
US8252701(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20100949256 |
申请日期 |
2010.11.18 |
申请人 |
SASAJIMA RYOTA;HIROSE YOSHIRO;OTA YOSUKE;AKAE NAONORI;YOKOZAWA KOJIRO;HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
SASAJIMA RYOTA;HIROSE YOSHIRO;OTA YOSUKE;AKAE NAONORI;YOKOZAWA KOJIRO |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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