发明名称 Method of fabricating flash memory device
摘要 A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
申请公布号 US8252661(B2) 申请公布日期 2012.08.28
申请号 US20100781777 申请日期 2010.05.17
申请人 PARK SUNG KEE;HYNIX SEMICONDUCTOR INC. 发明人 PARK SUNG KEE
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址