发明名称 |
Method for manufacturing memory cell |
摘要 |
In a method for manufacturing a memory cell, a substrate is provided. A doped region with a first conductive type is formed in the substrate near a surface of the substrate. A portion of the substrate is removed to define a plurality of fin structures in the substrate. A plurality of isolation structures is formed among the fin structures. A surface of the isolation structures is lower than a surface of the fin structures. A gate structure is formed over the substrate and straddles the fin structure. The gate structure includes a gate straddling the fin structure and a charge storage structure located between the fin structure and the gate. A source/drain region is formed with a second conductive type in the fin structure exposed by the gate structure, and the first conductive type is different from the second conductive type. |
申请公布号 |
US8252654(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20100942312 |
申请日期 |
2010.11.09 |
申请人 |
HSU TZU-HSUAN;LUE HANG-TING;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSU TZU-HSUAN;LUE HANG-TING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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