发明名称 3D interconnection structure and method of manufacturing the same
摘要 Provided are a three-dimensional (3D) interconnection structure and a method of manufacturing the same. The 3D interconnection structure includes a wafer that has one side of an inverted V-shape whose middle portion is convex and a lower surface having a U-shaped groove for mounting a circuit, and a first electrode formed to cover a part of the inverted V-shaped one side of the wafer and a part of the U-shaped groove.
申请公布号 US8252683(B2) 申请公布日期 2012.08.28
申请号 US20100878263 申请日期 2010.09.09
申请人 LIM KWON-SEOB;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 LIM KWON-SEOB
分类号 H01L21/44 主分类号 H01L21/44
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